Search for: All records

Creators/Authors contains: "Hung, Terry Y. T."

« Prev Next »

Total Resources

1

Resource Type
Conference Paper

0

Conference Proceeding

0

Dataset

0

Journal Article

1

Workshop Report

0

Availability
Full Text / Resource Available

1

Citation Only

0

Save Results
Excel (limit 2000)
CSV (limit 5000)
XML (limit 5000)

Have feedback or suggestions for a way to improve these results?
!

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Monolayer WSe2 induced giant enhancement in the spin Hall efficiency of Tantalum

https://doi.org/10.1038/s41699-020-0153-z

Debashis, Punyashloka ; Hung, Terry Y. T. ; Chen, Zhihong ( June 2020 , npj 2D Materials and Applications)

Abstract
Spin Orbit Torque Magnetic RAM (SOT-MRAM) is emerging as a promising memory technology owing to its high endurance, reliability and speed. A critical factor for its success is the development of materials that exhibit efficient conversion of charge current to spin current, characterized by their spin Hall efficiency. In this work, it is experimentally demonstrated that the spin Hall efficiency of the industrially relevant ultra-thin Ta can be enhanced by more than 25× when a monolayer (ML) WSe₂is inserted as an underlayer. The enhancement is attributed to spin absorption at the Ta/WSe₂interface, suggested by harmonic Hall measurements. The presented hybrid spin Hall stack with a 2D WSe₂underlayer has a total body thickness of less than 2 nm and exhibits greatly enhanced spin Hall efficiency, which makes this hybrid a promising candidate for energy efficient SOT-MRAM.

more » « less